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irl2203ns irl2203nl hexfet ? power mosfet www.irf.com 1 v dss = 30v r ds(on) = 7.0m ? i d = 116a s d g advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irl2203nl) is available for low-profile applications. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated 100% r g tested description to-262 irl2203nl d 2 pak irl2203ns absolute maximum ratings symbol parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm p u l se d d ra i n c urrent p d @t a = 25c power dissipation w p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v i ar a va l anc h e c urrent a e ar r epet i t i ve a va l anc h e e ner gy mj dv/dt peak diode recovery dv/dt v/ns operating junction and storage temperature range t stg soldering temperature, for 10 seconds thermal resistance symbol parameter typ max units r jc j unct i on-to- c ase ??? 0.85 r ja j unct i on-to- a m bi ent (pcb mount, stea dy state ) ??? 40 c/w 300 (1.6mm from case) 5.0 c -55 to + 175 t j 3.8 18 60 180 1.2 16 max 116 82 400 pd - 94394a
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) starting t j = 25c, l = 0.16mh r g = 25 ? , i as = 60a, v gs =10v (see figure 12) i sd 60a di/d 110a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.

electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min typ max units v (br)dss drain-to-source breakdown voltage 30 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.029 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 7.0 ??? ??? 10 v gs(th) gate threshold voltage 1.0 ??? 3.0 v g fs forward transconductance 73 ??? ??? s i dss drain-to-source leakage current ??? ??? 25 ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 q g total gate charge ??? ??? 60 q gs gate-to-source charge ??? ??? 14 q gd gate-to-drain ("miller") charge ??? ??? 33 r g gate resistance 0.2 ??? 3.0 ? t d(on) turn-on delay time ??? 11 ??? t r rise time ??? 160 ??? t d(off) turn-off delay time ??? 23 ??? t f fall time ??? 66 ??? between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 3290 ??? c oss output capacitance ??? 1270 ??? c rss reverse transfer capacitance ??? 170 ??? e as sin g le pulse avalanche ener g y ??? 1320 290 mj source-drain ratings and characteristics symbol parameter min typ max units i s continuous source current (body diode) a i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 56 84 ns q rr reverse recovery charge ??? 110 170 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v ds = v gs , i d = 250a v ds = 30v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c i as = 60a, l = 0.16mh v gs = 4.5v, see fig. 6 and 13 integral reverse p-n junction diode. t j = 25c, i s = 60a, v gs = 0v t j = 25c, i f = 60a v gs = 16v v gs = -16v mosfet symbol showing the v dd = 15v i d = 60a r g = 1.8 ? i d = 60a v ds = 24v conditions v gs = 4.5v, see fig. 10 v gs = 0v v ds = 25v ? = 1.0mhz, see fig. 5 a v ds = 25v, i d = 60a v gs = 10v, i d = 60a v gs = 4.5v, i d = 48a ??? 116 na nc nh pf ??? ??? 400 internal drain inductance internal source inductance 4.5 ??? 7.5 ??? ??? l d l s ??? ???
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 100a
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 0 3 6 9 12 15 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 60a v = 15v ds v = 24v ds 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 0 1000 2000 3000 4000 5000 6000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 % + -

25 50 75 100 125 150 175 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package
6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -

t p v (br)dss i as ! " #$ 25 50 75 100 125 150 175 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 24a 42a 60a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
www.irf.com 7
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ! " ? # ! "$ %% ? &
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for n-channel hexfet ? power mosfets
8 www.irf.com

f530s t his is an irf530s wit h lot code 8024 as s embled on ww 02, 2000 in t he as s embly line "l" as s e mb l y lot code internat ional rectifier logo part number dat e code year 0 = 2000 we e k 02 line l
dimensions are shown in millimeters (inches)
www.irf.com 9 to-262 package outline dimensions are shown in millimeters (inches) to-262 part marking information e x a m p l e : t h i s i s a n i r l 3 1 0 3 l l o t c o d e 1 7 8 9 a s s e m b l y p a r t n u m b e r d a t e c o d e w e e k 1 9 l i n e c l o t c o d e y e a r 7 = 1 9 9 7 a s s e m b l e d o n w w 1 9 , 1 9 9 7 i n t h e a s s e m b l y l i n e " c " l o g o r e c t i f i e r i n t e r n a t i o n a l igbt 1- gate 2- collec- tor
10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the automotive [q101] market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/03

3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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